PSMN7R0-60YS NXP Semiconductors, PSMN7R0-60YS Datasheet - Page 7

• Manufacturer Part Number: PSMN7R0-60YS
• Description: MOSFET,N CH,60V,89A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-60YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 4.95mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
PSMN7R0-60YS_2
Product data sheet
Fig 5.
Fig 7.
(S)
(pF)
g
5000
4000
3000
2000
1000
fs
C
100
80
60
40
20
0
0
drain current; typical values
as a function of drain-source voltage; typical
values
Forward transconductance as a function of
Input, output and reverse transfer capacitances
0
0
2.5
20
40
5
60
7.5
All information provided in this document is subject to legal disclaimers.
003aae058
003aae059
V
I
GS
D
(A)
(V)
C
C
rss
iss
80
10
Rev. 02 — 30 March 2010
N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET
Fig 6.
Fig 8.
R
(mΩ)
(A)
DSon
I
D
20
15
10
80
60
40
20
5
0
0
function of gate-source voltage; typical values
of gate-source voltage; typical values
Transfer characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
5
2
PSMN7R0-60YS
T
j
= 175 °C
10
4
T
15
j
= 25 °C
© NXP B.V. 2010. All rights reserved.
V
GS
V
003aae057
003aae062
GS
(V)
(V)
20
6
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