PSMN7R0-60YS NXP Semiconductors, PSMN7R0-60YS Datasheet - Page 2

• Manufacturer Part Number: PSMN7R0-60YS
• Description: MOSFET,N CH,60V,89A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-60YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 4.95mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN7R0-60YS_2
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN7R0-60YS
Symbol
S
S
S
G
D
Pinning information
Ordering information
LFPAK
Package
Name
Description
source
source
source
gate
mounting base; connected to
drain
Table 1.
Symbol Parameter
Static characteristics
R
DSon
plastic single-ended surface-mounted package (LFPAK); 4 leads
drain-source
on-state resistance
Description
Quick reference
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 30 March 2010
…continued
Conditions
V
T
V
T
j
j
N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET
GS
GS
= 100 °C; see
= 25 °C; see
Simplified outline
= 10 V; I
= 10 V; I
SOT669 (LFPAK)
D
D
1 2 3 4
= 15 A;
= 15 A;
Figure 13
Figure 12
mb
PSMN7R0-60YS
Graphic symbol
Min
-
-
Typ
-
4.95
mbb076
G
© NXP B.V. 2010. All rights reserved.
Max
10.2
6.4
Version
SOT669
D
S
Unit
mΩ
mΩ
2 of 15