PSMN7R0-60YS NXP Semiconductors, PSMN7R0-60YS Datasheet - Page 6

• Manufacturer Part Number: PSMN7R0-60YS
• Description: MOSFET,N CH,60V,89A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-60YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 4.95mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
6. Characteristics
Table 6.
PSMN7R0-60YS_2
Product data sheet
Symbol
Static characteristics
V
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
GSth
GS(pl)
SD
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
gate resistance
total gate charge
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
and
I
I
V
V
V
V
V
V
V
f = 1 MHz
I
and
I
I
I
and
V
V
see
V
R
I
I
V
D
D
D
D
D
D
D
D
D
S
S
DS
DS
GS
GS
GS
GS
GS
DS
DS
DS
DS
G(ext)
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 60 A; V
= 0 A; V
= 60 A; V
= 60 A; V
= 15 A; V
= 20 A; dI
Figure 16
All information provided in this document is subject to legal disclaimers.
11
= 60 V; V
= 60 V; V
15
15
= 30 V; see
= 30 V; V
= 30 V; R
= 30 V
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 10 V; I
= 4.7 Ω
DS
DS
DS
GS
DS
S
Rev. 02 — 30 March 2010
DS
DS
DS
D
D
D
/dt = -100 A/µs; V
= 0 V; V
GS
GS
DS
GS
L
GS
GS
DS
= 15 A; T
= 15 A; T
= 30 V; V
= 30 V; V
= 30 V; V
= 15 A; T
= 0 V; T
= V
= V
= V
= 0.5 Ω; V
Figure 14
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz; T
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
; T
; T
; T
N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET
GS
j
= 25 °C; see
GS
GS
j
j
j
j
j
j
GS
j
j
j
= 10 V
= 25 °C; see
= -55 °C; see
= 175 °C; see
= 175 °C; see
= 100 °C; see
= 25 °C; see
j
j
j
GS
= 25 °C
= 125 °C
= 25 °C
= -55 °C
= 25 °C
= 25 °C
and
= 10 V; see
= 10 V; see
= 10 V; see
= 10 V;
GS
15
= 0 V;
j
= 25 °C;
Figure 17
Figure 10
Figure 13
Figure 14
Figure 14
Figure 11
Figure 12
Figure 12
Figure 14
Figure 11
PSMN7R0-60YS
Min
54
60
2
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
0.04
-
2
2
9.3
-
4.95
0.65
45
37.6
14.8
7.9
6.8
9.6
4.9
2712
366
202
19.9
12.6
0.8
41.9
57.3
20.3
37.9
© NXP B.V. 2010. All rights reserved.
Max
-
-
4
4.7
-
2
100
100
100
14.7
10.2
6.4
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.2
-
-
µA
pF
ns
ns
nC
Unit
V
V
V
V
V
µA
nA
nA
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
V
pF
pF
ns
ns
V
ns
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