PSMN7R0-60YS NXP Semiconductors, PSMN7R0-60YS Datasheet - Page 4

• Manufacturer Part Number: PSMN7R0-60YS
• Description: MOSFET,N CH,60V,89A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-60YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 4.95mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
PSMN7R0-60YS_2
Product data sheet
Fig 3.
(A)
10
I
10
D
10
10
-1
3
2
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
Limit R
DSon
= V
DS
/ I
1
D
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 30 March 2010
DC
N-channel LFPAK 60 V 6.4 mΩ standard level MOSFET
10
t
100 μ s
1 ms
10 ms
100 ms
p
=10 μ s
10
PSMN7R0-60YS
2
V
DS
(V)
© NXP B.V. 2010. All rights reserved.
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10
3
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