BSM15GD120DLCE3224 Infineon Technologies, BSM15GD120DLCE3224 Datasheet

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BSM15GD120DLCE3224

Manufacturer Part Number
BSM15GD120DLCE3224
Description
IGBT Modules N-CH 1.2KV 35A
Manufacturer
Infineon Technologies
Datasheet
1.BSM15GD120DLCE3224.pdf (9 pages)

Specifications of BSM15GD120DLCE3224

Configuration
Hex
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.1 V
Continuous Collector Current At 25 C
35 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
145 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPACK 2A

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BSM15GD120DLCE3224
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
IGBT-Module
IGBT-Modules
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I
Isolations-Prüfspannung
insulation test voltage
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
prepared by: Mark Münzer
approved by: M. Hierholzer
Höchstzulässige Werte / Maximum rated values
Charakteristische Werte / Characteristic values
Technische Information / Technical Information
2
t - value, Diode
T
T
t
T
t
V
RMS, f = 50 Hz, t = 1 min.
I
I
I
f = 1MHz,T
f = 1MHz,T
V
V
V
date of publication: 2006-01-31
revision: 4
BSM15GD120DLC E3224
C
C
C
P
P
V
C
C
C
R
CE
CE
CE
GE
= 1 ms, T
= 1 ms
= 15A, V
= 15A, V
= 0,6mA, V
=25°C, Transistor
= 80 °C
= 25 °C
= 0V, t
= 1200V, V
= 1200V, V
= 0V, V
= -15V...+15V
p
GE
GE
vj
vj
= 10ms, T
GE
C
= 25°C,V
= 25°C,V
CE
= 80°C
= 15V, T
= 15V, T
= 20V, T
GE
GE
= V
= 0V, T
= 0V, T
GE
Vj
, T
CE
CE
vj
vj
1(8)
vj
= 125°C
= 25°C
= 125°C
vj
= 25V, V
= 25V, V
= 25°C
vj
vj
= 25°C
= 25°C
= 125°C
GE
GE
= 0V
= 0V
V
V
I
V
V
V
C,nom.
I
I
C
C
I
I
CRM
P
CE sat
GE(th)
Q
FRM
CES
GES
I
ISOL
GES
CES
I
I
2
C
tot
F
ies
res
G
t
min.
4,5
Seriendatenblatt_BSM15GD120DLC-E3224.xls
-
-
-
-
-
-
-
-
+/- 20V
1200
typ.
0,16
0,07
145
200
2,5
2,1
2,4
5,5
15
35
30
15
30
93
1
2
-
max.
400
2,6
2,9
6,5
76
-
-
-
-
nA
kV
nF
nF
W
A
V
A
A
A
V
A
A
V
V
V
C
A
A
2
s

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BSM15GD120DLCE3224 Summary of contents

Page 1

Technische Information / Technical Information IGBT-Module IGBT-Modules Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom ...

Page 2

Technische Information / Technical Information IGBT-Module IGBT-Modules Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) ...

Page 3

Technische Information / Technical Information IGBT-Module IGBT-Modules Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resistance, case to heatsink Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Mechanische Eigenschaften / Mechanical ...

Page 4

Technische Information / Technical Information IGBT-Module IGBT-Modules Ausgangskennlinie (typisch) Output characteristic (typical 25° 125° 0,0 0,5 1,0 Ausgangskennlinienfeld (typisch) Output characteristic (typical VGE = 17V VGE = ...

Page 5

Technische Information / Technical Information IGBT-Module IGBT-Modules Übertragungscharakteristik (typisch) Transfer characteristic (typical Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical 0,0 0,5 ...

Page 6

Technische Information / Technical Information IGBT-Module IGBT-Modules Schaltverluste (typisch) Switching losses (typical) 6 Eoff 5 Eon Erec Schaltverluste (typisch) Switching losses (typical) 9 Eoff 7,5 Eon Erec 6 4 ...

Page 7

Technische Information / Technical Information IGBT-Module BSM15GD120DLC E3224 IGBT-Modules Transienter Wärmewiderstand Transient thermal impedance 10 1 0,1 0,01 0,001 0, [K/kW] : IGBT i [sec] : IGBT i r [K/kW] : Diode i [sec] : Diode i Sicherer ...

Page 8

... Technische Information / Technical Information BSM15GD120DLCE3224 IGBT-Module IGBT-Modules Gehäusemaße / Schaltbild Package outline / Circuit diagram 8(8) Seriendatenblatt_BSM15GD120DLC-E3224 ...

Page 9

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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