BSM15GD120DLCE3224 Infineon Technologies, BSM15GD120DLCE3224 Datasheet - Page 6

• Manufacturer Part Number: BSM15GD120DLCE3224
• Description: IGBT Modules N-CH 1.2KV 35A
• Manufacturer: Infineon Technologies

Specifications of BSM15GD120DLCE3224

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 35 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 145 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 2A

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
7,5
4,5
1,5
6
5
4
3
2
1
0
9
6
3
0
0
Schaltverluste (typisch)
Switching losses (typical)
0
Schaltverluste (typisch)
Switching losses (typical)
60
5
Eoff
Eon
Erec
Eoff
Eon
Erec
120
BSM15GD120DLC E3224
10
V
E
GE
180
on
=15V, R
= f (I
V
gon
E
GE
C
on
=15V , I
R
= R
6(8)
) , E
I
C
240
G
15
= f (R
[A]
goff
[ ]
off
=56
C
= 15A , V
= f (I
G
) , E
, V
CE
300
C
CE
= 600V, T
) , E
off
= 600V , T
20
= f (R
rec
j
= f (I
= 125°C
j
360
G
= 125°C
) , E
C
)
rec
25
= f (R
420
Seriendatenblatt_BSM15GD120DLC-E3224.xls
G
)
480
30