BSM15GD120DLCE3224 Infineon Technologies, BSM15GD120DLCE3224 Datasheet - Page 5

• Manufacturer Part Number: BSM15GD120DLCE3224
• Description: IGBT Modules N-CH 1.2KV 35A
• Manufacturer: Infineon Technologies

Specifications of BSM15GD120DLCE3224

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 35 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 145 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 2A

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
30
25
20
15
10
30
25
20
15
10
5
0
5
0
0,0
5
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
6
0,5
Tj = 25°C
Tj = 125°C
7
BSM15GD120DLC E3224
Tj = 25°C
Tj = 125°C
1,0
8
V
V
5(8)
GE
1,5
F
[V]
[V]
9
I
C
V
CE
2,0
= f (V
= 20V
10
GE
)
2,5
I
F
11
= f (V
Seriendatenblatt_BSM15GD120DLC-E3224.xls
F
)
3,0
12