BSM15GD120DLCE3224 Infineon Technologies, BSM15GD120DLCE3224 Datasheet - Page 7

• Manufacturer Part Number: BSM15GD120DLCE3224
• Description: IGBT Modules N-CH 1.2KV 35A
• Manufacturer: Infineon Technologies

Specifications of BSM15GD120DLCE3224

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 35 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 145 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 2A

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,01
0,1
10
1
0,001
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
35
30
25
20
15
10
5
0
0
Transienter Wärmewiderstand
Transient thermal impedance
r
r
i
i
[K/kW]
[K/kW]
i
i
[sec]
[sec]
i
IC,Modul
IC,Chip
200
: IGBT
: IGBT
: Diode
: Diode
0,01
BSM15GD120DLC E3224
400
0,1
0,048
164,3
0,003
388
1
600
7(8)
V
326,8
0,049
438,7
0,018
CE
800
2
t [sec]
1
[V]
Z
thJC
V
GE
= 15V, R
= f (t)
1000
Zth:Diode
Zth:IGBT
118,7
0,055
778,6
0,043
3
g
= 56 Ohm, T
10
1200
Seriendatenblatt_BSM15GD120DLC-E3224.xls
vj
= 125°C
1,149
118,4
0,312
26,5
4
1400
100