BSM15GD120DLCE3224 Infineon Technologies, BSM15GD120DLCE3224 Datasheet - Page 4

• Manufacturer Part Number: BSM15GD120DLCE3224
• Description: IGBT Modules N-CH 1.2KV 35A
• Manufacturer: Infineon Technologies

Specifications of BSM15GD120DLCE3224

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.1 V
• Continuous Collector Current At 25 C: 35 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 145 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPACK 2A

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
30
25
20
15
10
30
25
20
15
10
5
0
5
0
0,0
0,0
Ausgangskennlinienfeld (typisch)
Output characteristic (typical)
Ausgangskennlinie (typisch)
Output characteristic (typical)
0,5
0,5
1,0
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
VGE = 7V
Tj = 25°C
Tj = 125°C
1,0
BSM15GD120DLC E3224
1,5
1,5
2,0
V
V
4(8)
CE
CE
2,0
2,5
[V]
[V]
3,0
V
2,5
I
C
GE
= f (V
= 15V
I
C
T
3,5
vj
= f (V
= 125°C
CE
3,0
)
CE
4,0
)
Seriendatenblatt_BSM15GD120DLC-E3224.xls
3,5
4,5
4,0
5,0