MCR08BT1 T/R NXP Semiconductors, MCR08BT1 T/R Datasheet - Page 10

• Manufacturer Part Number: MCR08BT1 T/R
• Description: SCRs TAPE-7 TRIAC
• Manufacturer: NXP Semiconductors

Specifications of MCR08BT1 T/R

• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 200 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Package / Case: SC-73
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MCR08BT1,115

Philips Semiconductors
10. Revision history
Table 6:
9397 750 13513
Product data sheet
Document ID
MCR08BT1_3
Modifications:
MCR08BT1_HG_2
MCR08BT1_1
Revision history
Release date
20041129
20011023
20010701
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The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors
Table 5
changed Max. value from 1.5 V to 1.7 V
Table 5
and changed Typ. value from 25 V/ s to 800 V/ s
Figure 9 “On-state current
Figure 12 “Critical rate of rise of off-state voltage as a function of junction temperature; typical
values.”: curve values changed and ‘gate open circuit’ curve added.
“Characteristics”: on-state voltage, changed Typ. value from 1.25 V to 1.35 V and
“Characteristics”: critical rate of rise of off-state voltage, added Min. value of 500 V/ s
Data sheet status
Product data sheet
Product specification
Product specification
Rev. 03 — 29 November 2004
characteristics.”: curve values changed
Change notice
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Doc. number
9397 750 13513
9397 750 08943
n.a.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
MCR08BT1
Thyristor; logic level
Supersedes
MCR08BT1_HG_2
MCR08BT1_1
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