MCR08BT1 T/R NXP Semiconductors, MCR08BT1 T/R Datasheet - Page 2

• Manufacturer Part Number: MCR08BT1 T/R
• Description: SCRs TAPE-7 TRIAC
• Manufacturer: NXP Semiconductors

Specifications of MCR08BT1 T/R

• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 200 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Package / Case: SC-73
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MCR08BT1,115

Philips Semiconductors
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
9397 750 13513
Product data sheet
Symbol
V
I
I
I
I
dI
I
V
V
P
P
T
T
T(AV)
T(RMS)
TSM
2
GM
Fig 1. Total power dissipation as a function of average on-state current; maximum values
DRM
GM
RGM
GM
G(AV)
stg
j
t
T
/dt
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/ s.
P
(W)
, V
tot
0.8
0.6
0.4
0.2
RRM
1
0
a = form factor = I
0
Limiting values
Parameter
repetitive peak off-state voltage
average on-state current
RMS on-state current
non-repetitive peak on-state
current
I
repetitive rate of rise of on-state
current after triggering
peak gate current
peak gate voltage
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
0.1
T(RMS)
/I
T(AV)
.
0.2
Rev. 03 — 29 November 2004
4
0.3
Conditions
half sine wave; T
see
all conduction angles; see
Figure 4
half sine wave; T
prior to surge; see
and
t = 10 ms
I
dI
over any 20 ms period
TM
G
t = 10 ms
t = 8.3 ms
/dt = 100 mA/ s
= 2 A; I
Figure 1
3
and
2.8
G
= 10 mA;
5
0.4
sp
j
= 25 C
Figure 2
112 C;
2.2
conduction
(degrees)
angle
0.5
120
180
30
60
90
[1]
1.9
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Min
-
-
-
-
-
-
-
-
-
-
-
-
factor
40
form
1.57
2.8
2.2
1.9
a
4
0.6
MCR08BT1
Max
200
0.5
0.8
8
9
0.32
50
1
5
5
2
0.1
+150
125
Thyristor; logic level
I
T(AV)
a =
1.57
001aac104
(A)
Unit
V
A
A
A
A
A
A/ s
A
V
V
W
W
0.7
C
C
2
110
113
116
119
122
125
s
T
( C)
sp(max)
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