MCR08BT1 T/R NXP Semiconductors, MCR08BT1 T/R Datasheet - Page 3
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MCR08BT1 T/R
Manufacturer Part Number
MCR08BT1 T/R
Description
SCRs TAPE-7 TRIAC
Manufacturer
NXP Semiconductors
Datasheet
1.MCR08BT1115.pdf
(12 pages)
Specifications of MCR08BT1 T/R
Breakover Current Ibo Max
9 A
Rated Repetitive Off-state Voltage Vdrm
200 V
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Forward Voltage Drop
1.7 V
Gate Trigger Voltage (vgt)
0.8 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
0.2 mA
Holding Current (ih Max)
5 mA
Mounting Style
SMD/SMT
Package / Case
SC-73
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MCR08BT1,115
Philips Semiconductors
9397 750 13513
Product data sheet
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
I
I
TSM
TSM
(A)
(A)
10
10
10
10
8
6
4
2
0
1
3
2
10
f = 50 Hz.
values
t
p
1
5
10 ms.
10
10
4
Rev. 03 — 29 November 2004
10
10
2
3
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
T
I
T
t
j
p
T
initial = 25 C max
I
n
(s)
T
j
initial = 25 C max
MCR08BT1
t
p
Thyristor; logic level
t
p
I
001aac105
001aac106
TSM
I
TSM
t
t
10
10
3
2
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