MCR08BT1 T/R NXP Semiconductors, MCR08BT1 T/R Datasheet - Page 3

• Manufacturer Part Number: MCR08BT1 T/R
• Description: SCRs TAPE-7 TRIAC
• Manufacturer: NXP Semiconductors

Specifications of MCR08BT1 T/R

• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 200 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Package / Case: SC-73
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MCR08BT1,115

Philips Semiconductors
9397 750 13513
Product data sheet
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
I
I
TSM
TSM
(A)
(A)
10
10
10
10
8
6
4
2
0
1
3
2
10
f = 50 Hz.
values
t
p
1
5
10 ms.
10
10
4
Rev. 03 — 29 November 2004
10
10
2
3
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
T
I
T
t
j
p
T
initial = 25 C max
I
n
(s)
T
j
initial = 25 C max
MCR08BT1
t
p
Thyristor; logic level
t
p
I
001aac105
001aac106
TSM
I
TSM
t
t
10
10
3
2
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