MCR08BT1 T/R NXP Semiconductors, MCR08BT1 T/R Datasheet - Page 7

• Manufacturer Part Number: MCR08BT1 T/R
• Description: SCRs TAPE-7 TRIAC
• Manufacturer: NXP Semiconductors

Specifications of MCR08BT1 T/R

• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 200 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Package / Case: SC-73
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MCR08BT1,115

Philips Semiconductors
7. Package information
9397 750 13513
Product data sheet
Fig 11. Normalized holding current as a function of
I
H(25 C)
I
H(Tj)
3
2
1
0
R
junction temperature.
50
GK
= 1 k .
0
Epoxy meets requirements of UL94 V-0 at
50
100
001aab504
T
j
( C)
Rev. 03 — 29 November 2004
150
Fig 12. Critical rate of rise of off-state voltage as a
dV
(V/ s)
(1) R
(2) Gate open circuit.
D
10
10
10
/dt
10
4
3
2
function of junction temperature; typical
values.
1
0
GK
8
inch.
= 1 k .
(2)
(1)
50
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
MCR08BT1
100
Thyristor; logic level
T
j
001aac115
( C)
150
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