MCR08BT1 T/R NXP Semiconductors, MCR08BT1 T/R Datasheet - Page 4

• Manufacturer Part Number: MCR08BT1 T/R
• Description: SCRs TAPE-7 TRIAC
• Manufacturer: NXP Semiconductors

Specifications of MCR08BT1 T/R

• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 200 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Package / Case: SC-73
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MCR08BT1,115

Philips Semiconductors
5. Thermal characteristics
Table 4:
9397 750 13513
Product data sheet
Symbol
R
R
Fig 4. RMS on-state current as a function of surge
th(j-sp)
th(j-a)
I
T(RMS)
(A)
2.0
1.5
1.0
0.5
0
10
f = 50 Hz; T
duration for sinusoidal currents; maximum
values
Parameter
thermal resistance from junction to
solder point
thermal resistance from junction to
ambient
2
Thermal characteristics
sp
10
112 C.
1
1
surge duration (s)
001aac107
Rev. 03 — 29 November 2004
10
Conditions
see
printed-circuit board mounted,
minimum footprint
printed-circuit board mounted, pad
area as in
Figure 6
Figure 14
Fig 5. RMS on-state current as a function of solder
I
T(RMS)
(A)
1.2
1.0
0.8
0.6
0.4
0.2
0
T
point temperature; maximum values
50
sp
= 112 C.
0
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
50
Min
-
-
-
MCR08BT1
Thyristor; logic level
Typ
-
156
70
100
T
001aac108
sp
( C)
Max
15
-
-
150
Unit
K/W
K/W
K/W
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