BLF888 NXP Semiconductors, BLF888 Datasheet - Page 11

• Manufacturer Part Number: BLF888
• Description: RF MOSFET Small Signal 500W, 470-860MHz
• Manufacturer: NXP Semiconductors

Specifications of BLF888

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.105 Ohms
• Drain-source Breakdown Voltage: 104 V
• Gate-source Breakdown Voltage: 11 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934062101112

Fig 12. Class-AB common-source broadband amplifier; V
50 Ω
See
C36
C37
+V
+V
Table 9
C33
G1(test)
G2(test)
R7
R5
R3
R4
R6
R8
L33
for a list of components.
C34
C35
L32
B2
C32 C31
L31
L30
C30
D1(test)
, V
L5
D2(test)
C17
C18
C1
L1
C2
, V
C3
G1(test)
R1
C4
R2
C19
C20
C5
C11
C12
C6
and V
C7
C9
C10
G2(test)
L2
are drain and gate test voltages
B1
L3
C13
C14
L4
C15
C16
C8
C21
C22
+V
+V
001aak650
50 Ω
D1(test)
D2(test)