BLF888 NXP Semiconductors, BLF888 Datasheet - Page 14

• Manufacturer Part Number: BLF888
• Description: RF MOSFET Small Signal 500W, 470-860MHz
• Manufacturer: NXP Semiconductors

Specifications of BLF888

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.105 Ohms
• Drain-source Breakdown Voltage: 104 V
• Gate-source Breakdown Voltage: 11 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934062101112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 11.
BLF888
Product data sheet
Document ID
BLF888 v.5
Modifications:
BLF888 v.4
BLF888 v.3
BLF888 v.2
BLF888 v.1
Revision history
Table 10.
Acronym
CCDF
DVB
DVB-T
LDMOS
LDMOST
OFDM
PAR
RF
TTF
UHF
VSWR
Release date
20110121
20100429
20100211
20091022
20081216
•
Table 6 on page
Abbreviations
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Preliminary data sheet
Objective data sheet
3: in the conditions column of g
Rev. 5 — 21 January 2011
Description
Complementary Cumulative Distribution Function
Digital Video Broadcast
Digital Video Broadcast - Terrestrial
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Orthogonal Frequency Division Multiplexing
Peak-to-Average power Ratio
Radio Frequency
Time To Failure
Ultra High Frequency
Voltage Standing-Wave Ratio
Change notice
-
-
-
-
-
fs
the symbol V
UHF power LDMOS transistor
GS
has been changed to V
BLF888 v.1
Supersedes
BLF888 v.4
BLF888 v.3
BLF888 v.2
-
© NXP B.V. 2011. All rights reserved.
BLF888
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