BLF888 NXP Semiconductors, BLF888 Datasheet - Page 13

• Manufacturer Part Number: BLF888
• Description: RF MOSFET Small Signal 500W, 470-860MHz
• Manufacturer: NXP Semiconductors

Specifications of BLF888

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.105 Ohms
• Drain-source Breakdown Voltage: 104 V
• Gate-source Breakdown Voltage: 11 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934062101112

NXP Semiconductors
9. Package outline
Fig 15. Package outline SOT979A
BLF888
Product data sheet
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads
Dimensions
inches
Note
1. millimeter dimensions are derived from the original inch dimensions.
mm
Unit
SOT979A
version
Outline
(1)
max
nom
max
nom
min
min
H
U
A
0.227
0.189
5.77
4.80
2
A
A
L
11.81
11.56
0.465
0.455
b
0.006
0.004
0.15
0.10
IEC
c
30.94
1.218
31.55
1.242
D
1
3
31.37
31.12
1.235
1.225
D
1
JEDEC
10.29
10.03
0.405
0.395
All information provided in this document is subject to legal disclaimers.
E
References
10.29
10.03
0.405
0.395
D
U
H
E
D
q
e
Rev. 5 — 21 January 2011
1
1
1
1
0
13.72
0.540
e
JEITA
scale
b
1.969
1.689
0.078
0.067
5
F
17.50
17.25
0.689
0.679
2
4
10 mm
H
25.53
25.27
1.005
0.995
H
w3
1
5
0.152
0.132
3.86
3.35
L
F
p
0.130
0.120
3.30
3.05
B
C
p
w2
w1
0.119
0.109
3.02
2.77
UHF power LDMOS transistor
Q
European
projection
C
A
35.56
1.400
q
B
E
41.28
41.02
1.625
1.615
1
U
1
© NXP B.V. 2011. All rights reserved.
Q
10.29
10.03
0.405
0.395
U
BLF888
2
Issue date
08-04-24
08-09-04
c
0.010
0.25
w
1
sot979a_po
E
SOT979A
0.010
0.020
0.25
0.51
w
w
13 of 17
3
2