BLF888 NXP Semiconductors, BLF888 Datasheet - Page 9

• Manufacturer Part Number: BLF888
• Description: RF MOSFET Small Signal 500W, 470-860MHz
• Manufacturer: NXP Semiconductors

Specifications of BLF888

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.105 Ohms
• Drain-source Breakdown Voltage: 104 V
• Gate-source Breakdown Voltage: 11 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934062101112

NXP Semiconductors
8. Test information
Table 9.
For test circuit, see
BLF888
Product data sheet
Component
B1, B2
C1
C2, C9, C10
C3
C4, C5, C6
C7
C8, C13, C14
C11, C12
List of components
7.4 Reliability
Figure
Description
semi rigid coax
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
Fig 11. BLF888 electromigration (I
12,
(10) T
(11) T
Figure 13
(1) T
(2) T
(3) T
(4) T
(5) T
(6) T
(7) T
(8) T
(9) T
Years
10
10
10
10
10
10
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %)  1 / .
1
6
5
4
3
2
j
j
j
j
j
j
j
j
j
j
j
= 100 C
= 110 C
= 120 C
= 130 C
= 140 C
= 150 C
= 160 C
= 170 C
= 180 C
= 190 C
= 200 C
0
and
All information provided in this document is subject to legal disclaimers.
Figure
(10)
(11)
(7)
(8)
(9)
Rev. 5 — 21 January 2011
4
14.
Value
25 ; 49.5 mm
12 pF
10 pF
4.7 pF
8.2 pF
5.6 pF
100 pF
2.0 pF
8
DS(DC)
, total device)
(1)
(2)
(3)
(4)
(5)
(6)
12
[1]
[1]
[2]
[1]
[2]
[1]
[2]
16
Remarks
EZ90-25-TP
UHF power LDMOS transistor
20
I
DS(DC)
001aak649
© NXP B.V. 2011. All rights reserved.
BLF888
(A)
24
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