BLF888 NXP Semiconductors, BLF888 Datasheet - Page 12

• Manufacturer Part Number: BLF888
• Description: RF MOSFET Small Signal 500W, 470-860MHz
• Manufacturer: NXP Semiconductors

Specifications of BLF888

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.105 Ohms
• Drain-source Breakdown Voltage: 104 V
• Gate-source Breakdown Voltage: 11 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934062101112

NXP Semiconductors
BLF888
Product data sheet
Fig 13. Printed-Circuit Board (PCB) for class-AB common source amplifier
Fig 14. Component layout for class-AB common source amplifier
mm
50
50 Ω
C33
C34
R3
See
See
L33
C36
C37
R4
Table 9
Table 9
C35
L32
L32
+V
+V
All information provided in this document is subject to legal disclaimers.
R5
G1(test)
G2(test)
C32
R6
for a list of components.
for a list of components.
Rev. 5 — 21 January 2011
C31
L31
L31
R7
R8
C30
L30
L30
C1
mm
6.5
C17
C18
L5
L5
9 mm
C2
105 mm
19.5 mm
2 mm
31.5 mm
C3
L1
L1
R1
C4
R2
C19
C20
C5 C6
UHF power LDMOS transistor
C12
+
−
−
+
C11
L2
L2
C22
C21
C7
C10
C9
+V
+V
D1(test)
D2(test)
© NXP B.V. 2011. All rights reserved.
BLF888
C13
C14
L3
L3
001aak652
C21
001aak651
L4
C15
C16
12 of 17
C8
50
Ω