BLF888 NXP Semiconductors, BLF888 Datasheet - Page 8

• Manufacturer Part Number: BLF888
• Description: RF MOSFET Small Signal 500W, 470-860MHz
• Manufacturer: NXP Semiconductors

Specifications of BLF888

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.105 Ohms
• Drain-source Breakdown Voltage: 104 V
• Gate-source Breakdown Voltage: 11 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934062101112

NXP Semiconductors
BLF888
Product data sheet
Table 8.
Simulated Z
f
MHz
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
925
950
975
1000
i
Typical push-pull impedance
and Z
All information provided in this document is subject to legal disclaimers.
L
device impedance; impedance info at V
Rev. 5 — 21 January 2011
3.395 + j3.212
3.746 + j3.317
4.142 + j3.377
4.583 + j3.374
5.063 + j3.288
5.566 + j3.094
6.064 + j2.770
6.514 + j2.299
Z

1.417 + j0.961
1.492 + j1.171
1.577 + j1.378
1.672 + j1.582
1.779 + j1.783
1.901 + j1.983
2.039 + j2.180
2.196 + j2.373
2.376 + j2.563
2.581 + j2.745
2.817 + j2.918
3.087 + j3.076
i
…continued
DS
= 50 V and P
UHF power LDMOS transistor
Z

4.346 + j0.432
4.214 + j0.353
4.084 + j0.266
3.958 + j0.173
3.834 + j0.074
3.713  j0.031
3.596  j0.142
3.482  j0.257
3.372  j0.377
3.266  j0.501
3.163  j0.628
3.064  j0.759
2.968  j0.893
2.876  j1.030
2.787  j1.170
2.701  j1.312
2.619  j1.455
2.540  j1.601
2.464  j1.749
2.391  j1.898
L
L(PEP)
© NXP B.V. 2011. All rights reserved.
BLF888
= 600 W (DVB-T).
8 of 17