IKB06N60T Infineon Technologies, IKB06N60T Datasheet - Page 10

• Manufacturer Part Number: IKB06N60T
• Description: IGBT 600V 12A 88W TO263-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKB06N60T

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 6A
• Current - Collector (ic) (max): 12A
• Power - Max: 88W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: IGBT
• Dc Collector Current: 6A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 88W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 12.0 A
• Ic(max) @ 100°: 6.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 25. Typical reverse recovery current
10A
Figure 27. Typical diode forward current as
8A
6A
4A
2A
0A
8A
6A
4A
2A
0A
0V
200A/µs
di
as a function of diode current
slope
(V
Dynamic test circuit in Figure E)
a function of forward voltage
F
/dt,
V
R
= 400V, I
F
,
400A/µs
DIODE CURRENT SLOPE
FORWARD VOLTAGE
1V
F
= 6A,
600A/µs
T
J
=175°C
T
25°C
J
=175°C
2V
T
TrenchStop
800A/µs
J
=25°C
10
®
series
Figure 26. Typical diode peak rate of fall of
Figure 28. Typical diode forward voltage as a
2,0V
1,5V
1,0V
0,5V
0,0V
-500A/µs
-400A/µs
-300A/µs
-200A/µs
-100A/µs
0A/µs
I
F
=12A
200A/µs
3A
6A
di
reverse recovery current as a
function of diode current slope
(V
Dynamic test circuit in Figure E)
function of junction temperature
T
F
J
/dt,
R
0°C
,
= 400V, I
JUNCTION TEMPERATURE
DIODE CURRENT SLOPE
400A/µs
50°C
F
= 6A,
IKB06N60T
600A/µs
T
Rev. 2.3 Oct. 07
100°C
J
=25°C
T
800A/µs
J
=175°C
150°C
p