IKB06N60T Infineon Technologies, IKB06N60T Datasheet - Page 9

• Manufacturer Part Number: IKB06N60T
• Description: IGBT 600V 12A 88W TO263-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKB06N60T

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 6A
• Current - Collector (ic) (max): 12A
• Power - Max: 88W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: IGBT
• Dc Collector Current: 6A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 88W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 12.0 A
• Ic(max) @ 100°: 6.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 21. IGBT transient thermal resistance
Figure 23. Typical reverse recovery time as
10
10
10
250ns
200ns
150ns
100ns
50ns
-1
-2
0
0ns
K/W
K/W
K/W
200A/µs
1µs
D=0.5
0.05
di
0.2
0.1
(D = t
a function of diode current slope
(V
Dynamic test circuit in Figure E)
F
/dt,
R
10µs 100µs 1ms
= 400V, I
400A/µs
0.02
0.01
single pulse
t
p
DIODE CURRENT SLOPE
P
/ T)
,
PULSE WIDTH
F
= 6A,
600A/µs
R
0.3837
0.4533
0.5877
0.2483
R , ( K / W )
1
C
1
=
1
/R
T
T
10m s 100m s
1
J
J
800A/µs
=175°C
=25°C
TrenchStop
C
5.047*10
4.758*10
4.965*10
4.717*10
2
=
, ( s )
2
/R
R
2
2
-2
-3
-4
-5
9
®
series
Figure 22. Diode transient thermal
Figure 24. Typical reverse recovery charge
0,5µC
0,4µC
0,3µC
0,2µC
0,1µC
0,0µC
10
10
10
-1
-2
0
K/W
K/W
K/W
200A/µs
1µs
D=0.5
di
impedance as a function of pulse
width
(D=t
as a function of diode current
slope
(V
Dynamic test circuit in Figure E)
0.05
F
0.2
0.1
/dt,
R
=400V, I
P
10µs 100µs 1ms
/T)
t
DIODE CURRENT SLOPE
400A/µs
P
0.02
0.01
single pulse
,
PULSE WIDTH
F
=6 A,
IKB06N60T
R
0.2520
0.4578
1.054
0.7822
R , ( K / W )
1
600A/µs
C
1
=
Rev. 2.3 Oct. 07
1
/R
1
10m s 100m s
T
C
T
4.849*10
1.014*10
1.309*10
1.343*10
800A/µs
J
2
=175°C
J
=
=25°C
, ( s )
2
/R
R
2
2
-2
-2
-3
-4
p