IKB06N60T Infineon Technologies, IKB06N60T Datasheet - Page 5

• Manufacturer Part Number: IKB06N60T
• Description: IGBT 600V 12A 88W TO263-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKB06N60T

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 6A
• Current - Collector (ic) (max): 12A
• Power - Max: 88W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: IGBT
• Dc Collector Current: 6A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 88W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 12.0 A
• Ic(max) @ 100°: 6.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 5. Typical output characteristic
Figure 7. Typical transfer characteristic
15A
12A
1 5A
1 2A
9A
6A
3A
0A
9A
6A
3A
0A
0V
0V
V
V
G E
CE
=20V
11V
13V
15V
V
,
(T
(V
9V
7V
2V
COLLECTOR
GE
j
CE
T
= 25°C)
,
J
GATE-EMITTER VOLTAGE
=20V)
=1 75 °C
1V
25 °C
4 V
-
EMITTER VOLTAGE
6V
2V
8V
TrenchStop
3V
1 0V
5
®
series
Figure 6. Typical output characteristic
Figure 8. Typical collector-emitter
15A
12A
9A
6A
3A
0A
2,5V
2,0V
1,5V
1,0V
0,5V
0,0V
0V
-50°C
V
G E
V
CE
=20V
11V
15V
13V
(T
saturation voltage as a function of
junction temperature
(V
T
,
9V
7V
COLLECTOR
J
j
GE
,
= 175°C)
JUNCTION TEMPERATURE
1V
= 15V)
0°C
-
EMITTER VOLTAGE
IKB06N60T
2V
50°C
Rev. 2.3 Oct. 07
100°C
3V
I
I
I
C
C
C
=3A
=6A
=12A
p