IKB06N60T Infineon Technologies, IKB06N60T Datasheet - Page 12

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IKB06N60T

Manufacturer Part Number
IKB06N60T
Description
IGBT 600V 12A 88W TO263-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IKB06N60T

Igbt Type
Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.05V @ 15V, 6A
Current - Collector (ic) (max)
12A
Power - Max
88W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
IGBT
Dc Collector Current
6A
Collector Emitter Voltage Vces
2.05V
Power Dissipation Max
88W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-40°C To +175°C
Transistor Case Style
TO-263
Rohs Compliant
Yes
Switching Frequency
TRENCHSTOP™ 2-20kHz
Package
D2PAK (TO-263)
Vce (max)
600.0 V
Ic(max) @ 25°
12.0 A
Ic(max) @ 100°
6.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IKB06N60T
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IKB06N60T
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IKB06N60T
Quantity:
5 000
Power Semiconductors
Figure A. Definition of switching times
Figure B. Definition of switching losses
TrenchStop
12
®
series
i,v
p(t)
T (t)
j
I
F
Figure C. Definition of diodes
switching characteristics
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
an d Stray capacity C
r
1
di /dt
1
r
F
I
1
r r m
IKB06N60T
r
2
2
r
t
2
S
Q
Q =Q
Rev. 2.3 Oct. 07
t =t
S
r r
r r
t
r r
S
Q
S
+
90% I
F
t
+
F
Q
t
F
=60nH
=40pF.
F
r r m
r
di
10% I
n
n
r r
r
n
/dt
r r m
p
V
T
t
R
C

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