IKB06N60T Infineon Technologies, IKB06N60T Datasheet - Page 7

• Manufacturer Part Number: IKB06N60T
• Description: IGBT 600V 12A 88W TO263-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKB06N60T

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 6A
• Current - Collector (ic) (max): 12A
• Power - Max: 88W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: IGBT
• Dc Collector Current: 6A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 88W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 12.0 A
• Ic(max) @ 100°: 6.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 13. Typical switching energy losses
Figure 15. Typical switching energy losses
0,4mJ
0,3mJ
0,2mJ
0,1mJ
0,0mJ
0,6 mJ
0,5 mJ
0,4 mJ
0,3 mJ
0,2 mJ
0,1 mJ
0,0 mJ
E
E
E
0A
on
ts
*) E
off
*
*
*) E
T
as a function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
as a function of junction
temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
due to diode recovery
50°C
due to diode recovery
J
I
CE
on
GE
,
C
on
,
JUNCTION TEMPERATURE
2A
=400V, V
and E
= 0/15V, I
COLLECTOR CURRENT
and E
ts
4A
ts
include losses
include losses
GE
C
100°C
=0/15V, R
= 6A, R
6A
J
CE
=175°C,
=400V,
G
8A
= 23Ω,
G
TrenchStop
E
=23Ω,
off
150°C
E
10A
on
*
E
ts
*
7
®
series
Figure 14. Typical switching energy losses
Figure 16. Typical switching energy losses
0,5m J
0,4m J
0,3m J
0,2m J
0,1m J
0,0m J
0,4 mJ
0,3 mJ
0,2 mJ
0,1 mJ
0,0 mJ
200V
V
*) E
CE
as a function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
as a function of collector emitter
voltage
(inductive load, T
V
Dynamic test circuit in Figure E)
*) E
due to diode recovery
,
CE
COLLECTOR
GE
on
due to diode recovery
and E
on
= 400V, V
300V
= 0/15V, I
R
and E
G
,
GATE RESISTOR
ts
ts
include losses
include losses
-
EMITTER VOLTAGE
C
GE
400V
IKB06N60T
= 6A, R
= 0/15V, I
J
J
=175°C,
= 175°C,
Rev. 2.3 Oct. 07
G
= 23Ω,
500V
C
= 6A,
E
E
E
E
E
E
ts
off
on
on
off
*
ts
*
*
*
p