IKB06N60T Infineon Technologies, IKB06N60T Datasheet - Page 3

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IKB06N60T

Manufacturer Part Number
IKB06N60T
Description
IGBT 600V 12A 88W TO263-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IKB06N60T

Igbt Type
Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.05V @ 15V, 6A
Current - Collector (ic) (max)
12A
Power - Max
88W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
IGBT
Dc Collector Current
6A
Collector Emitter Voltage Vces
2.05V
Power Dissipation Max
88W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-40°C To +175°C
Transistor Case Style
TO-263
Rohs Compliant
Yes
Switching Frequency
TRENCHSTOP™ 2-20kHz
Package
D2PAK (TO-263)
Vce (max)
600.0 V
Ic(max) @ 25°
12.0 A
Ic(max) @ 100°
6.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IKB06N60T
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IKB06N60T
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IKB06N60T
Quantity:
5 000
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
2)
1)
Power Semiconductors
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
b
b
t
t
t
t
E
E
E
t
Q
I
d i
t
t
t
t
E
E
E
t
Q
I
d i
TrenchStop
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
r r
r r m
d ( o n )
r
d ( o f f )
f
r r
r r m
o n
o f f
t s
o n
o f f
t s
r r
r r
r r
r r
/d t
/d t
j
j
=25 C
=175 C
3
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
®
j
C C
G E
j
R
j
C C
G E
j
R
G
G
=2 5 C ,
=2 5 C ,
F
=1 7 5 C,
=1 7 5 C
F
2 )
1 )
series
2 )
1 )
= 4 00 V , I
= 4 00 V , I
= 23 ,
= 2 3
/ d t =5 5 0 A/ s
/ d t =5 5 0 A/ s
= 40 0 V, I
= 0/ 15 V ,
=6 0 nH ,
= 40 0 V, I
= 0/ 15 V ,
=6 0 nH ,
= 4 0p F
= 4 0p F
Conditions
Conditions
F
F
C
C
= 6 A,
= 6 A,
= 6 A,
= 6 A,
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKB06N60T
Value
Value
0.335
0.09
0.11
0.14
0.18
typ.
typ.
130
123
190
450
165
180
500
285
0.2
5.3
7.6
58
84
9
6
9
8
Rev. 2.3 Oct. 07
max.
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
ns
mJ
ns
nC
A
A/ s
Unit
ns
mJ
ns
nC
A
A/ s
p

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