IGB10N60T Infineon Technologies, IGB10N60T Datasheet - Page 10
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IGB10N60T
Manufacturer Part Number
IGB10N60T
Description
IGBT 600V 20A 110W TO263-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet
1.IGB10N60T.pdf
(12 pages)
Specifications of IGB10N60T
Igbt Type
NPT, Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.05V @ 15V, 10A
Current - Collector (ic) (max)
20A
Power - Max
110W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
IGBT
Dc Collector Current
10A
Collector Emitter Voltage Vces
2.05V
Power Dissipation Max
110W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-40°C To +175°C
Transistor
RoHS Compliant
Transistor Case Style
TO-263
Rohs Compliant
Yes
Switching Frequency
TRENCHSTOP 2-20kHz
Package
D2PAK (TO-263)
Vce (max)
600.0 V
Ic(max) @ 25°
20.0 A
Ic(max) @ 100°
10.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IGB10N60T
Manufacturer:
INFINEON
Quantity:
12 500
Company:
Part Number:
IGB10N60TATMA1
Manufacturer:
INFINEON
Quantity:
1 000
IGB10N60T
p
®
TrenchStop
Series
PG-TO263-3-2
10
Rev. 1.2 12.08.2009