IGB10N60T Infineon Technologies, IGB10N60T Datasheet - Page 5

• Manufacturer Part Number: IGB10N60T
• Description: IGBT 600V 20A 110W TO263-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGB10N60T

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 110W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: IGBT
• Dc Collector Current: 10A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 110W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 20.0 A
• Ic(max) @ 100°: 10.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2 5 A
2 0 A
1 5 A
1 0 A
Figure 5. Typical output characteristic
Figure 7. Typical transfer characteristic
30A
25A
20A
15A
10A
5 A
0 A
5A
0A
0 V
0V
V
V
GE
CE
=20V
12V
10V
15V
V
,
(T
(V
8V
6V
2 V
GE
COLLECTOR
j
CE
1V
T
= 25°C)
,
J
GATE-EMITTER VOLTAGE
=20V)
= 1 7 5 °C
2 5 °C
4 V
2V
-
EMITTER VOLTAGE
6 V
3V
8 V
4V
1 0 V
5
TrenchStop
Figure 6. Typical output characteristic
Figure 8. Typical collector-emitter
30A
25A
20A
15A
10A
3,0V
2,5V
2,0V
1,5V
1,0V
0,5V
0,0V
5A
0A
-50°C
0V
V
®
GE
V
CE
Series
=20V
10V
15V
12V
(T
saturation voltage as a function of
junction temperature
(V
,
T
8V
6V
1V
COLLECTOR
J
j
GE
,
= 175°C)
JUNCTION TEMPERATURE
0°C
= 15V)
2V
-
50°C
EMITTER VOLTAGE
IGB10N60T
3V
Rev. 1.2 12.08.2009
100°C
4V
I
I
C
150°C
C
I
=20A
=10A
C
5V
=5A
p