IGB10N60T Infineon Technologies, IGB10N60T Datasheet - Page 3
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IGB10N60T
Manufacturer Part Number
IGB10N60T
Description
IGBT 600V 20A 110W TO263-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet
1.IGB10N60T.pdf
(12 pages)
Specifications of IGB10N60T
Igbt Type
NPT, Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.05V @ 15V, 10A
Current - Collector (ic) (max)
20A
Power - Max
110W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
IGBT
Dc Collector Current
10A
Collector Emitter Voltage Vces
2.05V
Power Dissipation Max
110W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-40°C To +175°C
Transistor
RoHS Compliant
Transistor Case Style
TO-263
Rohs Compliant
Yes
Switching Frequency
TRENCHSTOP 2-20kHz
Package
D2PAK (TO-263)
Vce (max)
600.0 V
Ic(max) @ 25°
20.0 A
Ic(max) @ 100°
10.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IGB10N60T
Manufacturer:
INFINEON
Quantity:
12 500
Company:
Part Number:
IGB10N60TATMA1
Manufacturer:
INFINEON
Quantity:
1 000
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
2)
1)
Leakage inductance L
Leakage inductance L
σ
σ
and Stray capacity C
and Stray capacity C
t
t
t
t
E
E
E
t
t
t
t
E
E
E
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
d ( o n )
r
d ( o f f )
f
o n
o f f
t s
o n
o f f
t s
σ
σ
j
j
=25 °C
=175 °C
3
due to dynamic test circuit in Figure E.
due to dynamic test circuit in Figure E.
TrenchStop
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
σ
σ
j
j
C C
G E
C C
G E
G
σ
G
σ
= 25° C,
= 17 5° C,
2 )
1 )
2 )
1 )
= 2 3Ω ,
= 23Ω
= 4 00V, I
= 0/ 1 5V ,
= 6 0nH ,
= 4 00V, I
= 0/ 1 5V ,
= 6 0nH ,
=40pF
=40pF
Conditions
Conditions
C
C
®
= 10A,
= 10A,
Series
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IGB10N60T
Value
Value
0.16
0.27
0.43
0.26
0.35
0.61
typ.
typ.
215
233
Rev. 1.2 12.08.2009
12
38
10
11
63
8
max.
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
ns
mJ
Unit
ns
mJ
p