IGB10N60T Infineon Technologies, IGB10N60T Datasheet - Page 11

• Manufacturer Part Number: IGB10N60T
• Description: IGBT 600V 20A 110W TO263-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGB10N60T

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 110W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: IGBT
• Dc Collector Current: 10A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 110W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 20.0 A
• Ic(max) @ 100°: 10.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure A. Definition of switching times
Figure B. Definition of switching losses
11
TrenchStop
®
i,v
p(t)
Series
T (t)
j
I
F
Figure C. Definition of diodes
switching characteristics
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
and Stray capacity C
τ
r
1
di /dt
1
r
F
I
r r m
1
IGB10N60T
τ
r
2
2
r
Rev. 1.2 12.08.2009
t
2
S
Q
Q =Q
t =t
S
r r
r r
t
r r
S
Q
S
+
σ
90% I
F
σ
t
+
F
Q
t
F
=60nH
=40pF.
F
r r m
τ
r
di
10% I
n
n
r r
r
n
/dt
r r m
p
V
T
t
R
C