IGB10N60T Infineon Technologies, IGB10N60T Datasheet - Page 9

• Manufacturer Part Number: IGB10N60T
• Description: IGBT 600V 20A 110W TO263-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGB10N60T

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 110W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: IGBT
• Dc Collector Current: 10A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 110W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 20.0 A
• Ic(max) @ 100°: 10.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 21. IGBT transient thermal resistance
10
10
10
-1
-2
0
K/W
K/W
K/W
10µs
D=0.5
0.1
0.2
(D = t
single pulse
0.01
0.02
100µs
0.05
t
p
P
/ T)
,
PULSE WIDTH
1ms
R
0.2911
0.4092
0.5008
0.1529
R , ( K / W )
1
C
1
=
τ
10ms
1
/ R
1
C
6.53*10
8.33*10
7.37*10
7.63*10
2
=
τ
100ms
τ
, ( s )
2
/ R
R
2
-2
-3
-4
-5
2
9
TrenchStop
®
Series
IGB10N60T
Rev. 1.2 12.08.2009
p