IGB10N60T Infineon Technologies, IGB10N60T Datasheet - Page 4

• Manufacturer Part Number: IGB10N60T
• Description: IGBT 600V 20A 110W TO263-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGB10N60T

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.05V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 110W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: IGBT
• Dc Collector Current: 10A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 110W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: D2PAK (TO-263)
• Vce (max): 600.0 V
• Ic(max) @ 25°: 20.0 A
• Ic(max) @ 100°: 10.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

120W
100W
Figure 1. Collector current as a function of
Figure 3. Power dissipation as a function of
30A
25A
20A
15A
10A
80W
60W
40W
20W
5A
0A
0W
10H z
25°C
50°C
switching frequency
(T
V
case temperature
(T
100H z
f,
GE
T
j
j
SWITCHING FREQUENCY
≤ 175°C, D = 0.5, V
≤ 175°C)
C
,
= 0/+15V, R
I
I
c
c
CASE TEMPERATURE
75°C
T
1kH z
C
=80°C
100°C 125°C 150°C
T
G
C
=110°C
= 23Ω)
10kH z
CE
= 400V,
100kH z
4
TrenchStop
Figure 2. Safe operating area
Figure 4. Collector current as a function of
0,1A
10A
30A
20A
10A
1A
0A
1V
25°C
®
V
CE
Series
(D = 0, T
V
case temperature
(V
,
GE
COLLECTOR
T
GE
=15V)
C
10V
,
≥ 15V, T
CASE TEMPERATURE
75°C
C
= 25°C, T
-
EMITTER VOLTAGE
j
IGB10N60T
≤ 175°C)
100V
Rev. 1.2 12.08.2009
j
≤175°C;
125°C
t
1000V
p
=1µs
100µs
500µs
20µs
5µs
10ms
DC
p