UPA1793G-E2-AT Renesas Electronics America, UPA1793G-E2-AT Datasheet - Page 4

• Manufacturer Part Number: UPA1793G-E2-AT
• Description: MOSFET N/P-CH 20V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA1793G-E2-AT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 69 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 3.1nC @ 4V
• Input Capacitance (ciss) @ Vds: 160pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS (T
2
Notes 1. PW
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (1 unit)
Total Power Dissipation (2 units)
Channel Temperature
Storage Temperature
2. Mounted on ceramic substrate of 5500 mm
10 s, Duty Cycle
Note1
Parameter
DS
GS
= 0 V)
= 0 V)
Note2
Note2
1%
A
= 25°C, All terminals are connected.)
DataSheet G16059EJ1V0DS
Symbol
I
V
V
I
D(pulse)
2
D(DC)
T
T
P
P
DSS
GSS
stg
ch
T
T
2.2 mm, T
N-Channel
A
20
= 25°C
12
12
3
–55 to +150
150
1.7
2.0
P-Channel
m
m
–20
m
12
12
3
Unit
°C
°C
W
W
V
V
A
A
PA1793