UPA1793G-E2-AT Renesas Electronics America, UPA1793G-E2-AT Datasheet - Page 10

• Manufacturer Part Number: UPA1793G-E2-AT
• Description: MOSFET N/P-CH 20V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA1793G-E2-AT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 69 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 3.1nC @ 4V
• Input Capacitance (ciss) @ Vds: 160pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

B) P-Channel
8
100
- 0.01
- 100
- 0.1
80
60
40
20
- 10
0
- 1
- 0.1
0
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
R
(at V
T
Single pulse
A
DS(on)
= 25 C
25
GS
V
T
DS
limited
= 4.5 V)
A
- Ambient Temperature - C
- Drain to Source Voltage - V
I
50
D(pulse)
I
100 0
D(DC)
DC
0.01
Power dissipation
limited
100
Mounted on ceram ic substrate
of 5500 m m
- 1
0.1
10
1
100
75
M oun ted o n ceram ic sub strate of
550 0 m m
S ingle pulse, 1 un it, T
100
2
x 2.2 mm , 1 unit
- 10
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 m
125
PW = 100 s
2
x 2.2 m m
1 ms
10 ms
100 ms
150
10 m
DataSheet G16059EJ1V0DS
- 100
175
PW - Pulse Width - s
A
= 2 5 C
100 m
1
2.8
2.4
1.6
1.2
0.8
0.4
2
0
0
R
th(ch-A )
10
1 unit
25
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
= 7 3.5 C /W
A
Mounted on ceramic substrate of
5500 mm
- Ambient Temperature - C
50
2 units
100
75
2
x 2.2 m m
100
1000
125
150
PA1793
175