UPA1793G-E2-AT Renesas Electronics America, UPA1793G-E2-AT Datasheet - Page 3

• Manufacturer Part Number: UPA1793G-E2-AT
• Description: MOSFET N/P-CH 20V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA1793G-E2-AT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 69 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 3.1nC @ 4V
• Input Capacitance (ciss) @ Vds: 160pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document No. G16059EJ1V0DS00 (1st edition)
Date Published September 2002 NS CP(K)
Printed in Japan
designed for Motor Drive application.
ORDERING INFORMATION
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
DESCRIPTION
FEATURES
The PA1793 is N- and P-Channel MOS Field Effect Transistors
Low on-state resistance
N-Channel R
P-Channel R
Low input capacitance
N-Channel C
P-Channel C
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
PART NUMBER
PA1793G
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
R
R
R
R
DS(on)1
DS(on)2
DS(on)3
DS(on)1
DS(on)2
DS(on)3
iss
iss
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
= 160 pF TYP.
= 370 pF TYP.
= 115 m MAX. (V
= 120 m MAX. (V
= 190 m MAX. (V
= 69 m
= 72 m
= 107 m
N- AND P-CHANNEL POWER MOS FET
MAX. (V
MAX. (V
MAX. (V
Power SOP8
PACKAGE
GS
GS
GS
GS
GS
GS
= 4.5 V, I
= 4.0 V, I
= –4.5 V, I
= –4.0 V, I
= –2.5 V, I
= 2.5 V, I
DATA SHEET
SWITCHING
D
D
D
D
D
D
= 1.5 A)
= 1.5 A)
= 1.0 A)
= –1.5 A)
= –1.5 A)
= –1.0 A)
MOS FIELD EFFECT TRANSISTOR
Gate
Gate
Protection
Diode
N-Channel
Source
Drain
PACKAGE DRAWING (Unit: mm)
8
1
5.37 Max.
EQUIVALENT CIRCUIT
0.40
1.27
Body
Diode
+0.10
–0.05
0.78 Max.
5
4
0.12 M
N-Channel
P-Channel
Gate
Gate
Protection
Diode
PA1793
0.5 ±0.2
©
6.0 ±0.3
1
2
7, 8
3
4
5, 6
4.4
P-Channel
; Source 1
; Gate 1
; Drain 1
; Source 2
; Gate 2
; Drain 2
Source
Drain
0.8
Body
Diode
2002
0.10