UPA1793G-E2-AT Renesas Electronics America, UPA1793G-E2-AT Datasheet - Page 11

• Manufacturer Part Number: UPA1793G-E2-AT
• Description: MOSFET N/P-CH 20V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA1793G-E2-AT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 69 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 3.1nC @ 4V
• Input Capacitance (ciss) @ Vds: 160pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

B) P-Channel
100
- 0.01
3 0 0
2 5 0
2 0 0
1 5 0
1 0 0
0.1
- 0.1
10
5 0
- 10
1
- 0.01
- 1
0
- 0 .1
FORWARD TRANSFER CHARACTERISTICS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
0
V
Pulsed
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DS
V
Pulsed
V
DS
= 10 V
V
G S
GS
= 10 V
- Gate to Source Voltage - V
=
I
I
- 0.1
D
D
- Drain Current - A
- Drain Current - A
2 .5 V
- 1
- 1
4 .0 V
4 .5 V
- 1
- 1 0
T
- 2
ch
T
= 125 C
ch
75 C
25 C
25 C
= 125 C
P u ls e d
75 C
25 C
25 C
- 10
DataSheet G16059EJ1V0DS
- 1 0 0
- 3
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
- 14
- 12
- 10
3 0 0
2 5 0
2 0 0
1 5 0
1 0 0
- 1.4
- 1.2
- 0.8
- 0.6
- 0.4
- 0.2
- 8
- 6
- 4
- 2
5 0
0
- 1
0
0
0
0
-50
V
GS
1 .5 A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
- 0.5
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
- 2
= 4.5 V
V
ch
V
GS
- Channel Temperature - C
DS
I
D
- Gate to Source Voltage - V
- Drain to Source Voltage - V
0
=
- 1
- 4
3 A
4.0 V
- 1.5
- 6
50
2.5 V
- 2
- 8
V
I
D
D S
100
P u ls e d
Pulsed
=
- 2.5
- 1 0
=
PA1793
1 m A
10 V
- 1 2
- 3
150
9