UPA1793G-E2-AT Renesas Electronics America, UPA1793G-E2-AT Datasheet - Page 8

• Manufacturer Part Number: UPA1793G-E2-AT
• Description: MOSFET N/P-CH 20V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA1793G-E2-AT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 69 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 3.1nC @ 4V
• Input Capacitance (ciss) @ Vds: 160pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

A) N-Channel
6
0.01
100
150
100
0.1
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
10
10
0
1
1
0.01
0.1
FORWARD TRANSFER CHARACTERISTICS
0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
Pulsed
V
Pulsed
DS
DS
V
V
= 10 V
= 10 V
GS
GS
4.0 V
4.5 V
- Gate to Source Voltage - V
= 2.5 V
I
I
D
D
0.1
1
- Drain Current - A
- Drain Current - A
1
T
10
ch
T
1
2
ch
= 125 C
= 125 C
Pulsed
75 C
25 C
25 C
75 C
25 C
25 C
100
DataSheet G16059EJ1V0DS
10
3
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
14
12
10
200
150
100
8
6
4
2
0
50
1.2
0.8
0.6
0.4
0.2
0
0
1
0
0
V
-50
GS
1.5 A
= 4.5 V
0.5
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
2
T
V
ch
V
GS
DS
I
- Channel Temperature - C
D
4.0 V
- Gate to Source Voltage - V
0
= 3 A
- Drain to Source Voltage - V
1
4
1.5
6
50
2.5 V
2
8
Pulsed
V
I
D
100
Pulsed
DS
2.5
= 1 mA
10
= 10 V
PA1793
3
12
150