PMN49EN,135 NXP Semiconductors, PMN49EN,135 Datasheet

MOSFET N-CH FET 30V 4.6A SC-74

PMN49EN,135

Manufacturer Part Number
PMN49EN,135
Description
MOSFET N-CH FET 30V 4.6A SC-74
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PMN49EN,135

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
47 mOhm @ 2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.6A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
8.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
350pF @ 30V
Power - Max
1.75W
Mounting Type
Surface Mount
Package / Case
SC-74-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934061119135
1. Product profile
2. Pinning information
Table 1.
Pin
1, 2, 5, 6
3
4
Pinning
Description
drain (D)
gate (G)
source (S)
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology.
I
I
I
I
PMN49EN
N-channel TrenchMOS logic level FET
Rev. 01 — 13 April 2007
Logic level threshold
Battery management
V
R
DS
DSon
30 V
47 m
Simplified outline
SOT457 (TSOP6)
1
6
5
2
I
I
I
I
4
3
Fast switching
High-speed switching
I
Q
D
GD
4.6 A
= 1.6 nC (typ)
Symbol
Product data sheet
mbb076
G
D
S

Related parts for PMN49EN,135

PMN49EN,135 Summary of contents

Page 1

PMN49EN N-channel TrenchMOS logic level FET Rev. 01 — 13 April 2007 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. 1.2 Features I Logic level threshold 1.3 ...

Page 2

... NXP Semiconductors 3. Ordering information Table 2. Ordering information Type number Package Name PMN49EN SC-74 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage DS V drain-gate voltage (DC) DGR V gate-source voltage GS I drain current D I peak drain current ...

Page 3

... NXP Semiconductors 120 P der (%) 100 P tot P = ----------------------- - 100 % der P tot 25 C Fig 1. Normalized total power dissipation as a function of solder point temperature Limit DSon single pulse sp DM Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PMN49EN_1 Product data sheet ...

Page 4

... NXP Semiconductors 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point th(j-sp 0.5 th(j-sp) (K/W) 0.2 10 0.1 0.05 0.02 1 single pulse - Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration PMN49EN_1 Product data sheet ...

Page 5

... NXP Semiconductors 6. Characteristics Table 5. Characteristics unless otherwise specified. j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage GS(th) I drain leakage current DSS I gate leakage current GSS R gate resistance G R drain-source on-state DSon resistance Dynamic characteristics Q total gate charge ...

Page 6

... NXP Semiconductors 4 (A) 7 0.25 0 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 10 V > DSon 150 Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values PMN49EN_1 Product data sheet 003aab598 4 R DSon (V) DS Fig 6 ...

Page 7

... NXP Semiconductors 2.5 V GS(th) (V) 2 max 1.5 typ min 1 0 Fig 9. Gate-source threshold voltage as a function of junction temperature ( 2.5 5 Fig 11. Gate-source voltage as a function of gate charge; typical values PMN49EN_1 Product data sheet 03aa33 ( 120 180 Fig 10. Sub-threshold drain current as a function of ...

Page 8

... NXP Semiconductors (A) 7.5 5 150 C 2 0.3 0 and 150 Fig 13. Source current as a function of source-drain voltage; typical values PMN49EN_1 Product data sheet 003aab601 (pF 0.9 1 Fig 14. Input, output and reverse transfer capacitances Rev. 01 — 13 April 2007 PMN49EN N-channel TrenchMOS logic level FET ...

Page 9

... NXP Semiconductors 7. Package outline Plastic surface-mounted package (TSOP6); 6 leads y 6 pin 1 index 1 e DIMENSIONS (mm are the original dimensions UNIT b p 0.1 0.40 1.1 0.26 mm 0.013 0.25 0.9 0.10 OUTLINE VERSION IEC SOT457 Fig 15. Package outline SOT457 (TSOP6) PMN49EN_1 Product data sheet ...

Page 10

... NXP Semiconductors 8. Revision history Table 6. Revision history Document ID Release date PMN49EN_1 20070413 PMN49EN_1 Product data sheet N-channel TrenchMOS logic level FET Data sheet status Change notice Product data sheet - Rev. 01 — 13 April 2007 PMN49EN Supersedes - © NXP B.V. 2007. All rights reserved. ...

Page 11

... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...

Page 12

... NXP Semiconductors 11. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 9 Legal information 9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 9.2 Defi ...

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