PMN49EN,135 NXP Semiconductors, PMN49EN,135 Datasheet - Page 8

• Manufacturer Part Number: PMN49EN,135
• Description: MOSFET N-CH FET 30V 4.6A SC-74
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMN49EN,135

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 47 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 8.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 350pF @ 30V
• Power - Max: 1.75W
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061119135

NXP Semiconductors
PMN49EN_1
Product data sheet
Fig 13. Source current as a function of source-drain
(A)
I
S
7.5
2.5
10
5
0
T
voltage; typical values
0
j
= 25 C and 150 C; V
0.3
150 C
0.6
GS
= 0 V
0.9
T
j
V
= 25 C
003aab601
SD
(V)
1.2
Rev. 01 — 13 April 2007
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
3
2
10
V
as a function of drain-source voltage; typical
values
GS
-1
= 0 V; f = 1 MHz
N-channel TrenchMOS logic level FET
1
10
PMN49EN
© NXP B.V. 2007. All rights reserved.
V
DS
003aab602
C
C
C
oss
(V)
rss
iss
10
2
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