PMN49EN,135 NXP Semiconductors, PMN49EN,135 Datasheet - Page 4

• Manufacturer Part Number: PMN49EN,135
• Description: MOSFET N-CH FET 30V 4.6A SC-74
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMN49EN,135

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 47 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 8.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 350pF @ 30V
• Power - Max: 1.75W
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061119135

NXP Semiconductors
5. Thermal characteristics
Table 4.
PMN49EN_1
Product data sheet
Symbol Parameter
R
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
th(j-sp)
Z
(K/W)
th(j-sp)
10
10
10
-1
2
1
10
thermal resistance from junction to solder point
-5
0.2
0.1
0.05
0.02
single pulse
Thermal characteristics
0.5
10
-4
10
-3
Rev. 01 — 13 April 2007
10
Conditions
see
-2
Figure 4
10
N-channel TrenchMOS logic level FET
-1
P
Min
-
1
t
p
PMN49EN
t
p
T
Typ
-
(s)
© NXP B.V. 2007. All rights reserved.
003aab596
=
T
t
p
t
Max
70
10
4 of 12
Unit
K/W