PMN49EN,135 NXP Semiconductors, PMN49EN,135 Datasheet - Page 3

• Manufacturer Part Number: PMN49EN,135
• Description: MOSFET N-CH FET 30V 4.6A SC-74
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMN49EN,135

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 47 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 8.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 350pF @ 30V
• Power - Max: 1.75W
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061119135

NXP Semiconductors
PMN49EN_1
Product data sheet
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(A)
I
D
P
10
10
(%)
120
10
der
10
80
40
-1
-2
0
2
1
10
function of solder point temperature
T
P
0
sp
der
-1
= 25 C; I
=
----------------------- -
P
Limit R
tot 25 C
50
P
DM
tot
DSon
is single pulse
= V
100 %
100
DS
/ I
D
150
T
03aa17
sp
1
( C)
200
Rev. 01 — 13 April 2007
DC
Fig 2. Normalized continuous drain current as a
(%)
I
der
120
80
40
0
function of solder point temperature
I
0
der
=
10
------------------- -
I
N-channel TrenchMOS logic level FET
D 25 C
I
50
D
100 %
100
t
100 s
1 ms
10 ms
100 ms
p
V
= 10 s
DS
PMN49EN
(V)
150
© NXP B.V. 2007. All rights reserved.
T
003aab227
03aa25
sp
( C)
10
200
2
3 of 12