PMN49EN,135 NXP Semiconductors, PMN49EN,135 Datasheet - Page 5

• Manufacturer Part Number: PMN49EN,135
• Description: MOSFET N-CH FET 30V 4.6A SC-74
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMN49EN,135

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 47 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 8.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 350pF @ 30V
• Power - Max: 1.75W
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061119135

NXP Semiconductors
6. Characteristics
Table 5.
T
PMN49EN_1
Product data sheet
Symbol Parameter
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
V
C
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
j
(BR)DSS
GS(th)
GS(pl)
SD
G
DSon
iss
oss
rss
iss
G(tot)
GS
GD
r
= 25 C unless otherwise specified.
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
gate leakage current
gate resistance
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
input capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
Characteristics
Conditions
I
I
V
V
f = 1 MHz; V
V
V
I
see
V
see
V
V
I
I
D
D
D
S
S
DS
GS
GS
GS
GS
GS
DS
T
T
T
T
T
T
T
T
T
= 1.5 A; V
= 2 A; dI
= 250 A; V
= 1 mA; V
= 3 A; V
j
j
j
j
j
j
j
j
j
Figure 11
Figure 14
= 30 V; V
= 15 V; R
= 20 V; V
= 10 V; I
= 4.5 V; I
= 0 V; V
= 0 V; V
= 25 C
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
= 25 C
= 150 C
Rev. 01 — 13 April 2007
DS
S
/dt = 100 A/ s; V
GS
DS
GSS(AC)
DS
DS
D
D
= 15 V; V
GS
L
GS
and
= 2 A; see
DS
= V
= 1.5 A; see
= 15 ; V
= 0 V; see
= 30 V; f = 1 MHz;
= 0 V; f = 1 MHz
= 0 V
= 0 V
= 0 V
12
GS
= 150 mV
; see
GS
GS
Figure 6
= 4.5 V;
Figure 13
Figure 9
= 10 V; R
Figure 6
GS
= 0 V
and
N-channel TrenchMOS logic level FET
and
and
G
8
= 6
10
8
Min
30
27
1
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PMN49EN
Typ
-
-
1.5
-
-
-
-
10
1.9
40
68
49
8.8
1.1
1.6
2.83
350
100
64.1
570
4.1
4.3
12.9
4.9
0.79
19.25 -
0.73
© NXP B.V. 2007. All rights reserved.
Max
-
-
2
-
2.2
1
100
100
-
47
80
60
-
-
-
-
-
-
-
-
-
-
-
-
1.2
-
5 of 12
Unit
V
V
V
V
V
nA
m
m
m
nC
nC
nC
V
pF
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
A
A