PMN49EN,135 NXP Semiconductors, PMN49EN,135 Datasheet - Page 7

• Manufacturer Part Number: PMN49EN,135
• Description: MOSFET N-CH FET 30V 4.6A SC-74
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMN49EN,135

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 47 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 8.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 350pF @ 30V
• Power - Max: 1.75W
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061119135

NXP Semiconductors
PMN49EN_1
Product data sheet
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Gate-source voltage as a function of gate
V
V
(V)
GS(th)
(V)
GS
2.5
1.5
0.5
7.5
2.5
10
2
1
0
5
0
I
junction temperature
charge; typical values
-60
D
0
= 1 mA; V
I
T
D
j
= 3 A
= 25 C
2.5
0
DS
= V
15 V
GS
60
5
max
typ
min
V
DS
120
=19 V
7.5
Q
T
003aab597
03aa33
j
G
( C)
(nC)
180
10
Rev. 01 — 13 April 2007
Fig 10. Sub-threshold drain current as a function of
Fig 12. Gate charge waveform definitions
(A)
10
I
10
10
10
10
10
D
-1
-2
-3
-4
-5
-6
T
gate-source voltage
0
j
V
= 25 C; V
V
V
V
GS(pl)
DS
GS(th)
GS
N-channel TrenchMOS logic level FET
Q
DS
GS1
= 5 V
1
I
Q
min
D
GS
Q
GS2
Q
typ
G(tot)
Q
GD
2
PMN49EN
max
© NXP B.V. 2007. All rights reserved.
V
GS
003aaa508
03aa36
(V)
3
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