BSP030,115 NXP Semiconductors, BSP030,115 Datasheet

MOSFET N-CH 30V 10A SOT223

BSP030,115

Manufacturer Part Number
BSP030,115
Description
MOSFET N-CH 30V 10A SOT223
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BSP030115.pdf (13 pages)

Specifications of BSP030,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Mounting Type
Surface Mount
Power - Max
8.3W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
40nC @ 10V
Vgs(th) (max) @ Id
2.8V @ 1mA
Current - Continuous Drain (id) @ 25° C
10A
Drain To Source Voltage (vdss)
30V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 5A, 10V
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
30 mOhms
Forward Transconductance Gfs (max / Min)
12 S
Drain-source Breakdown Voltage
43 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
10 A
Power Dissipation
8.3 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934043650115::BSP030 T/R::BSP030 T/R
1. Description
2. Features
3. Applications
4. Pinning information
Table 1:
1.
Pin
1
2
3
4
TrenchMOS is a trademark of Royal Philips Electronics.
Pinning - SOT223, simplified outline and symbol
Description
gate (g)
drain (d)
source (s)
drain (d)
c
c
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™
Product availability:
BSP030 in SOT223.
BSP030
N-channel enhancement mode field-effect transistor
Rev. 04 — 26 July 2000
TrenchMOS™ technology
Fast switching
Low on-state resistance
Logic level compatible
Surface mount package.
Motor and actuator driver
Battery management
High speed, low resistance switch.
1
technology.
Simplified outline
1
4
SOT223
2
3
03ab45
Symbol
N-channel MOSFET
g
Product specification
d
s
03ab30

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BSP030,115 Summary of contents

Page 1

BSP030 N-channel enhancement mode field-effect transistor Rev. 04 — 26 July 2000 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ Product availability: BSP030 in SOT223. 2. Features TrenchMOS™ technology Fast switching Low on-state resistance Logic ...

Page 2

Philips Semiconductors 5. Quick reference data Table 2: Quick reference data Symbol Parameter V drain-source voltage (DC drain current (DC total power dissipation tot T junction temperature j R drain-source on-state resistance DSon 6. Limiting values ...

Page 3

Philips Semiconductors 120 P der (%) 100 100 P tot P = ---------------------- 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of solder point ...

Page 4

Philips Semiconductors 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to solder th(j-sp) point R thermal resistance from junction to ambient th(j-a) 7.1 Transient thermal impedance Fig 4. Transient thermal impedance from junction to ...

Page 5

Philips Semiconductors 8. Characteristics Table 5: Characteristics unless otherwise specified j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage I GS(th) I drain-source leakage current DSS I gate-source leakage current GSS ...

Page 6

Philips Semiconductors Table 5: Characteristics …continued unless otherwise specified j Symbol Parameter Source-drain diode V source-drain (diode forward) SD voltage t reverse recovery time rr Q recovered charge ...

Page 7

Philips Semiconductors 3 V GS(th) (V) 2.5 typ 2 1.5 min 1 0.5 0 - Fig 9. Gate-source threshold voltage as a function of junction temperature. 16 ...

Page 8

Philips Semiconductors ( 150 0.2 0.4 0 and 150 ...

Page 9

Philips Semiconductors 9. Package outline Plastic surface mounted package; collector pad for good heat transfer; 4 leads DIMENSIONS (mm are the original dimensions) UNIT 1.8 ...

Page 10

Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 04 20000726 HZG336 Product specification; fourth version; supersedes BSP030_3 of 970313. Converted from VDMOS (Nijmegen) to TrenchMOS™ technology (Hazel Grove). 03 19970313 - Product specification; third version; ...

Page 11

Philips Semiconductors 11. Data sheet status Datasheet status Product status Definition Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data ...

Page 12

Philips Semiconductors Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. ...

Page 13

Philips Semiconductors Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . ...

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