BSP030,115 NXP Semiconductors, BSP030,115 Datasheet - Page 7

• Manufacturer Part Number: BSP030,115
• Description: MOSFET N-CH 30V 10A SOT223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BSP030,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 8.3W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 10A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 5A, 10V
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 30 mOhms
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 43 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 8.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934043650115::BSP030 T/R::BSP030 T/R

Philips Semiconductors
9397 750 07268
Product specification
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
I
T
D
j
= 25 C and 150 C; V
= 1 mA; V
V GS(th)
junction temperature.
drain current; typical values.
g fs
(S)
(V)
16
14
12
10
2.5
1.5
0.5
8
6
4
2
0
3
2
1
0
0
-60
DS
2
= V
T j = 25 o C
-20
GS
4
6
DS
20
8 10 12 14 16 18 20
min
typ
V DS > I D X R DSon
I
D
60
R
DSon
100
I D (A)
T j ( o C)
140
150 o C
03ac28
03aa34
180
Rev. 04 — 26 July 2000
N-channel enhancement mode field-effect transistor
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
T
V
j
GS
= 25 C; V
C iss , C oss ,
gate-source voltage.
as a function of drain-source voltage; typical
values.
C rss (pF)
= 0 V; f = 1 MHz
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
(A)
I
D
10 3
0
10 4
10 2
10 -1
DS
= 5 V
0.5
1
min
1
1.5
© Philips Electronics N.V. 2000. All rights reserved.
2
10
typ
V GS (V)
2.5
V DS (V)
BSP030
03aa37
C iss
C oss
03ac30
C rss
3
10 2
7 of 13