BSP030,115 NXP Semiconductors, BSP030,115 Datasheet - Page 9

• Manufacturer Part Number: BSP030,115
• Description: MOSFET N-CH 30V 10A SOT223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BSP030,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 8.3W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 10A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 5A, 10V
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 30 mOhms
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 43 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 8.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934043650115::BSP030 T/R::BSP030 T/R

9. Package outline
Fig 15. SOT223.
Philips Semiconductors
9397 750 07268
Product specification
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT223
1.8
1.5
A
0.10
0.01
A
1
1
y
0.80
0.60
b
p
IEC
e
3.1
2.9
1
b
1
b
0.32
0.22
D
e
1
c
2
b
6.7
6.3
p
D
JEDEC
4
3.7
3.3
E
REFERENCES
3
Rev. 04 — 26 July 2000
0
4.6
e
w
B
M
2.3
e
SC-73
B
scale
1
EIAJ
2
N-channel enhancement mode field-effect transistor
c
7.3
6.7
H
E
A
4 mm
1.1
0.7
L
1
p
0.95
0.85
Q
0.2
v
H
E
E
detail X
0.1
w
PROJECTION
EUROPEAN
0.1
y
© Philips Electronics N.V. 2000. All rights reserved.
A
L
p
Q
X
BSP030
ISSUE DATE
97-02-28
99-09-13
v
A
M
A
SOT223
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