BSP030,115 NXP Semiconductors, BSP030,115 Datasheet - Page 8

• Manufacturer Part Number: BSP030,115
• Description: MOSFET N-CH 30V 10A SOT223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BSP030,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 8.3W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 10A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 5A, 10V
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 30 mOhms
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 43 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 8.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934043650115::BSP030 T/R::BSP030 T/R

Philips Semiconductors
9397 750 07268
Product specification
Fig 13. Source (diode forward) current as a function of
T
j
= 25 C and 150 C; V
source-drain (diode forward) voltage; typical
values.
(A)
I S
20
18
16
14
12
10
8
6
4
2
0
0
V GS = 0 V
0.2
0.4
GS
= 0 V
0.6
150 o C
0.8
Tj = 25 o C
V SD (V)
1
03ac29
1.2
Rev. 04 — 26 July 2000
N-channel enhancement mode field-effect transistor
Fig 14. Gate-source voltage as a function of gate
I
D
= 5 A; V
charge; typical values.
V GS
(V)
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
DS
0
= 15 V
I D = 5 A
V DS = 15 V
T j = 25 o C
5
10
15
© Philips Electronics N.V. 2000. All rights reserved.
20
25
Q G (nC)
BSP030
30
03ac31
35
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