PHP18NQ11T,127 NXP Semiconductors, PHP18NQ11T,127 Datasheet
PHP18NQ11T,127
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PHP18NQ11T,127 Summary of contents
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PHP18NQ11T N-channel TrenchMOS standard level FET Rev. 02 — 10 March 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for ...
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... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain 3. Ordering information Table 3. Ordering information Type number Package Name PHP18NQ11T TO-220AB 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). ...
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... NXP Semiconductors 120 I der (%) 100 Fig 1. Normalized continuous drain current as a function of mounting base temperature 2 10 Limit DSon − Fig 3. Safe operating area: continuous and peak currents as a function of drain-source voltage PHP18NQ11T_2 Product data sheet 03aa24 150 200 T (°C) mb Fig 2. ...
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... NXP Semiconductors 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from th(j-mb) junction to mounting base R thermal resistance from th(j-a) junction to ambient 10 Z th(j-mb) (K/W) δ = 0.5 1 0.2 0.1 0.05 −1 10 0.02 single pulse −2 10 −5 − Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration ...
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... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V drain-source (BR)DSS breakdown voltage V gate-source threshold GS(th) voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance Dynamic characteristics Q total gate charge G(tot) Q gate-source charge GS Q gate-drain charge GD C input capacitance ...
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... NXP Semiconductors ( 0.5 1 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values − (A) min −2 10 −3 10 −4 10 −5 10 − Fig 7. Sub-threshold drain current as a function of gate-source voltage PHP18NQ11T_2 Product data sheet 003aaa593 6 V 5 4.8 V 4 (V) DS Fig 6 ...
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... NXP Semiconductors 0.2 4.8 5 5.2 R DSon (Ω) 0.15 0.1 0. Fig 9. Drain-source on-state resistance as a function of drain current; typical values ( Fig 11. Gate-source voltage as a function of gate charge; typical values PHP18NQ11T_2 Product data sheet 03am64 5 ° ( (A) D Fig 10. Normalized drain-source on-state resistance 003aaa597 ...
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... NXP Semiconductors Fig 13. Source current as a function of source-drain voltage; typical values PHP18NQ11T_2 Product data sheet ( 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 10 March 2010 PHP18NQ11T N-channel TrenchMOS standard level FET 003aaa596 25 °C 0.9 1.2 ...
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... NXP Semiconductors 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB D L DIMENSIONS (mm are the original dimensions) (2) UNIT 4.7 1.40 0.9 1.6 mm 4.1 1.25 0.6 1.0 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION IEC SOT78 Fig 14 ...
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... Document ID Release date PHP18NQ11T_2 20100310 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. PHP18NQ11T-01 (9397 20031113 750 12305) PHP18NQ11T_2 ...
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... NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 9 Legal information 9.1 Data sheet status ...