PHP18NQ11T,127 NXP Semiconductors, PHP18NQ11T,127 Datasheet - Page 7

• Manufacturer Part Number: PHP18NQ11T,127
• Description: MOSFET N-CH 110V 18A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHP18NQ11T,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 79W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 18A
• Drain To Source Voltage (vdss): 110V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 9A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 10 V
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 79000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058144127::PHP18NQ11T::PHP18NQ11T

NXP Semiconductors
PHP18NQ11T_2
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
V
R
(V)
GS
(Ω)
DSon
0.15
0.05
10
0.2
0.1
8
6
4
2
0
0
of drain current; typical values
charge; typical values
Drain-source on-state resistance as a function
0
0
4.8
20 V
5
10
4
5.2
5.4
20
8
V
Q
DD
T
V
G
All information provided in this document is subject to legal disclaimers.
I
j
GS
D
003aaa597
= 25 °C
(nC)
= 80 V
(A)
03am64
(V) =
10
6
12
30
Rev. 02 — 10 March 2010
Fig 10. Normalized drain-source on-state resistance
Fig 12. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
a
10
4
3
2
3
2
1
0
10
-60
factor as a function of junction temperature
as a function of drain-source voltage; typical
values
-1
N-channel TrenchMOS standard level FET
0
1
60
PHP18NQ11T
10
120
V
© NXP B.V. 2010. All rights reserved.
DS
T
(V)
j
03am67
( ° C)
03aa29
C
C
C
oss
rss
iss
180
10
2
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