PHP18NQ11T,127 NXP Semiconductors, PHP18NQ11T,127 Datasheet - Page 2

• Manufacturer Part Number: PHP18NQ11T,127
• Description: MOSFET N-CH 110V 18A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHP18NQ11T,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 79W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 18A
• Drain To Source Voltage (vdss): 110V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 9A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 10 V
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 79000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058144127::PHP18NQ11T::PHP18NQ11T

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PHP18NQ11T_2
Product data sheet
Pin
1
2
3
mb
Type number
PHP18NQ11T
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
Symbol
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
TO-220AB
Package
Name
Description
gate
drain
source
mounting base; connected to
drain
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
Description
TO-220AB
Conditions
T
T
V
V
t
T
t
V
unclamped; t
T
p
p
j
j
mb
mb
GS
GS
GS
≤ 10 µs; pulsed; T
≤ 10 µs; pulsed; T
≥ 25 °C; T
≥ 25 °C; T
All information provided in this document is subject to legal disclaimers.
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
Rev. 02 — 10 March 2010
j
j
p
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
= 0.1 ms; R
= 100 °C; see
= 25 °C; see
Figure 2
= 25 °C; I
mb
mb
= 25 °C; see
= 25 °C
Simplified outline
GS
GS
D
= 20 kΩ
SOT78 (TO-220AB)
= 50 Ω
= 11 A; V
Figure 1
Figure 1
1 2
Figure 3
N-channel TrenchMOS standard level FET
mb
sup
and
3
≤ 25 V;
3
PHP18NQ11T
Graphic symbol
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
mbb076
G
© NXP B.V. 2010. All rights reserved.
Max
110
110
20
13
18
72
79
175
175
18
72
70
Version
SOT78
D
S
V
°C
°C
Unit
V
V
A
A
A
W
A
A
mJ
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